Be redistribution in GaInP and growth of GaInP/AlInP tunnel diode by gas source molecular beam epitaxy
نویسندگان
چکیده
The redistribution of Be during growth of GaInP layers by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry for the "rst time. Apparent Be di!usion occurs at doping level over 4]1019 cm~3 at growth temperature of 5003C. At lower temperature the Be di!usion pro"le exhibits a signi"cant increase of Be concentration and reduced di!usion. In contrast to Zn behavior in metalorganic vapor-phase epitaxy, no enhancement of Be redistribution in both GaInP and GaAs is observed by nearby highly n-type doped layers. Based on these results, a p`}n` GaInP tunnel diode with a high conductance of 15 mA/cm2 at 1.7 mV has been achieved. ( 2000 Elsevier Science B.V. All rights reserved. PACS: 71.55.Eq; 66.30.Jt; 68.55.Ln; 81.15.Hi
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